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SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2557 DESCRIPTION *With TO-3PN package *DARLINGTON APPLICATIONS *Series regulator and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 200 200 6 5 2 70 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SD2557 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 200 V VCEsat Collector-emitter saturation voltage IC=1A ;IB=5mA 1.5 V ICBO Collector cut-off current VCB=200V; IE=0 100 A IEBO Emitter cut-off current VEB=6V; IC=0 5 mA hFE DC current gain IC=1A ; VCE=5V 1500 6500 Cob Output capacitance IE=0 ; VCB=10V;f=1MHz 110 pF fT Transition frequency IE=0.5A ; VCE=10V 15 MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors PACKAGE OUTLINE 2SD2557 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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